SI2300 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

SI2300

N-Channel Enhancement Mode Field Effect Transistor

TY Semiconductor 

SMD Type

IC

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Drain-Source Breakdown Voltage

VDSS VGS=0V,ID=250uA

Zero Gate Voltage Drain Current

IDSS VDS=20V,VGS=0V

Gate-Body Leakage

IGSS VGS= 10V,VDS=0V

Gate Threshold Voltage *

VGS(th) VGS=VDS,ID=250uA

VGS=4.5V,ID=5.0A

Drain- Source on-state Resistance *

RDS(ON) VGS=2.5V,ID=4.0A

VGS=1.8V,ID=1.0A

On-State Drain Current *

ID(ON) VDS=5V,VGS=4.5V

Forward Transconductance *

gFS VDS=5V,ID=5A

Input Capacitance

CISS

Output Capacitance

COSS VDS = 15V, VGS = 0V,f =1.0MHZ

Reverse Transfer Capacitance

CRSS

Turn-On Delay Time

tD(on)

Rise Time

Turn-Off Delay Time

tr

tD(off)

VDD=10V,ID=1A,VGS=4.5V,RL=10

,RGEN=6

Fall Time

tf

Total Gate Charge

Qg

Gate-S ource Charge

Qgs VDS = 10V, ID = 3.5A,VGS = 4.5V

Gate-Drain Charge

Qgd

Drain-Source Diode Forward Current *

IS

Diode Forward Voltage

VSD VGS=0V,IS=1.25A

* Pulse Test:Pulse Width 300 ,Duty Cycle 2%

Product specification

KI2300(SI2300)

Min Typ Max Unit

20

V

1 uA

100 nA

0.6 0.78 1.5 V

32 40 m

50 60 m

62 75 m

18

A

5

S

888

pF

144

pF

115

pF

31.8

ns

14.5

ns

50.3

ns

31.9

ns

16.8

nC

2.5

nC

5.4

nC

1.25 A

0.825 1.2 V

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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