2SC5296 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SC5296

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC5296

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=5A;IB=1.25 A

5

V

VBEsat Base-emitter saturation voltage

IC=5A;IB=1.25 A

1.5

V

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0

800

V

IEBO

Emitter cut-off current

ICBO

Collector cut-off current

VEB=4V IC=0

VCB=800V ;IE=0

40

130 mA

10 μA

ICES

Collector cut-off current

VCE=1500V; RBE=0

1

mA

hFE-1

DC current gain

IC=1 A ; VCE=5V

15

25

hFE-2

DC current gain

IC=5A ; VCE=5V

4

7

固IN电C半H导AN体GE SEMICONDUTOR Switching times

tstg

Storage time

tf

Fall time

IC=4A;RL=50Ω

IB1=0.8A; IB2=-1.6A

VCC=200V

3.0

0.1 0.2

μs

μs

2

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