2SC5296 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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Fabricante

2SC5296

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=5A;IB=1.25 A

VBEsat Base-emitter saturation voltage

IC=5A;IB=1.25 A

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0

IEBO

Emitter cut-off current

VEB=4V IC=0

ICBO

Collector cut-off current

VCB=800V ;IE=0

ICES

Collector cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

Switching times

VCE=1500V; RBE=0

IC=1 A ; VCE=5V

IC=5A ; VCE=5V

tstg

Storage time

tf

Fall time

IC=4A;RL=50Ω

IB1=0.8A; IB2=-1.6A

VCC=200V

Product Specification

2SC5296

MIN TYP. MAX UNIT

5

V

1.5

V

800

V

40

130 mA

10 μA

1

mA

15

25

4

7

3.0 μs

0.1 0.2 μs

2

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