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MTW32N25E Datasheet PDF : 8 Pages
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MTW32N25E
Preferred Device
Power MOSFET
32 Amps, 250 Volts
N–Channel TO–247
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–Source Voltage
VDSS
250
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
250
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
± 20
VGSM ± 40
Drain Current – Continuous
ID
32
Drain Current – Continuous @ 100°C
ID
25
Drain Current – Single Pulse (tp ≤ 10 µs)
IDM
96
Total Power Dissipation
Derate above 25°C
PD
250
2.0
Operating and Storage Temperature Range TJ, Tstg –55 to
150
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
600
Thermal Resistance – Junction to Case
RθJC
0.50
Thermal Resistance – Junction to Ambient
RθJA
40
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10 seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
32 AMPERES
250 VOLTS
RDS(on) = 80 mΩ
N–Channel
D
G
1
23
S
4
TO–247AE
CASE 340K
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTW32N25E
LLYWW
1
Gate
3
Source
2
Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTW32N25E
TO–247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 3
Publication Order Number:
MTW32N25E/D
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