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2N2222ACSM4 Datasheet PDF : 2 Pages
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SEME
LAB
2N2222ACSM4
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 10mA
40
V(BR)CBO* Collector – Base Breakdown Voltage IC = 10µA
75
V(BR)EBO* Emitter – Base Breakdown Voltage
IE = 10µA
IC = 0
6
ICEX*
Collector Cut-off Current (IC = 0)
IB = 0
VCE = 60V
ICBO*
Collector – Base Cut-off Current
IE = 0
TC = 125°C
VCB = 60V
IEBO*
Emitter Cut-off Current (IC = 0)
IC = 0
VEB = 3V (off)
IBL*
Base Current
VCE = 60V VEB = 3V (off)
VCE(sat)*
Collector – Emitter Saturation Voltage IC = 150mA
IC = 500mA
IB = 15mA
IB = 50mA
VBE(sat)* Base – Emitter Saturation Voltage
IC = 150mA
IC = 500mA
IB = 15mA
IC = 50mA
0.6
IC = 0.1mA VCE = 10V
35
IC = 1mA
VCE = 10V
50
hFE*
DC Current Gain
IC = 10mA VCE = 10V
75
TA = –55°C IC = 10mA VCE = 10V
35
IC = 150mA VCE = 10V
100
IC = 150mA VCE = 1V
50
* Pulse test tp = 300µs , δ ≤ 2%
IC = 500mA VCE = 10V
40
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
fT
Transition Frequency
IC = 20mA VCE = 20V f = 100MHz 300
Cob
Output Capacitance
VCB = 10V IE = 0
f = 1.0MHz
Cib
Input Capacitance
VBE = 0.5V IC = 0
f = 1.0MHz
hfe
Small Signal Current Gain IC = 1mA
VCE = 10V f = 1kHz
50
IC = 10mA VCE = 10V f = 1kHz
75
Typ.
Typ.
Max.
10
10
10
10
20
0.3
1
1.2
2
Unit
V
V
V
nA
nA
µA
nA
nA
V
V
—
300
Max.
8
30
300
375
Unit
MHz
pF
pF
SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max. Unit
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = 30V
VBE = 0.5V (off)
IC1 = 150mA
IB1 = 15mA
VCC = 30V
IC = 150mA
IB1 = IB2 = 15mA
10
ns
25
ns
225 ns
60
ns
fT is defined as the frequency at which hFE extrapolates to unity.
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Prelim. 4/99
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