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MMBTA42LT1 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMBTA42LT1/D
High Voltage Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBTA42LT1*
MMBTA43LT1
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
DEVICE MARKING
Symbol
VCEO
VCBO
VEBO
IC
2
EMITTER
MMBTA42 MMBTA43
300
200
300
200
6.0
6.0
500
Unit
Vdc
Vdc
Vdc
mAdc
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
Unit
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
417
–55 to +150
°C/W
°C
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
MMBTA42
300
—
MMBTA43
200
—
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Vdc
MMBTA42
300
—
MMBTA43
200
—
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MMBTA42
MMBTA43
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MMBTA42
MMBTA43
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
V(BR)EBO
6.0
ICBO
—
—
IEBO
—
—
—
Vdc
µAdc
0.1
0.1
µAdc
0.1
0.1
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1998
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