BUT12AF Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BUT12AF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT12F; BUT12AF

handbook, halfpage

+IB

−VBE

VCC

LC

LB

D.U.T.

VCL

MGE246

VCL = up to 1000 V; VCC = 30 V; VBE = −1 to −5 V; LB = 1 µH;

LC = 200 µH.

Fig.13 Test circuit inductive load and reverse

bias SOAR.

handbook, halfpage

tr

90%

IB

10%

90%

IB on

t

−IB off

IC on

IC

10%

tf

ts

toff

t

MGE238

Fig.14 Switching times waveforms with

inductive load.

1997 Aug 13

8

Share Link: