BUT12AF Ver la hoja de datos (PDF) - Philips Electronics

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componentes Descripción

Fabricante

BUT12AF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT12F; BUT12AF

handbook1, 2h0alfpage

Ptot max

(%)

80

MGK674

40

0

0

50

100 Th (oC) 150

Fig.3 Power derating curve.

10

handbook, halfpage

IC

(A)

5

MGB892

BUT12F

BUT12AF

0

0

400

800 VCE (V) 1200

VBE = −1 to −5 V; Tmb = 100 °C.

Fig.4 Reverse bias SOAR.

handbook, halfpage

+ 50 V

100 to 200 Ω

L

horizontal

oscilloscope

vertical

6V

30 to 60 Hz

300 Ω

1Ω

MGE252

handbookI,Chalfpage

(mA)

250

200

100

0

MGE239

min VCE (V)

VCEOsust

Fig.5 Test circuit for collector-emitter

sustaining voltage.

1997 Aug 13

Fig.6 Oscilloscope display for collector-emitter

sustaining voltage.

5

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