BUT12AF Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BUT12AF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12F; BUT12AF
handbook, full pagewidth
102
IC
(A) ICM max
10 IC max
MGB935
II
1
I
10−1
10−2
10−3
DC
BUT12F
BUT12AF
10−4
1
10
102
103 VCE (V) 104
Tmb < 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 13
4
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