2SC3181N Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC3181N Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3181N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0
120
V
VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A
2.0
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=4A ; VCE=5V
VCB=120V; IE=0
VEB=5V; IC=0
1.5
V
5
μA
5
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
160
hFE-2
DC current gain
IC=4A ; VCE=5V
35
fT
Transition frequency
IC=1A ; VCE=5V
30
MHz
固IN电C半H导AN体GE SEMICONDUCTOR Cob
Output capacitance
hFE-1 Classifications
R
O
55-110
80-160
IE=0 ; VCB=10V ;f=1MHz
190
pF
2
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