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Número de pieza
componentes Descripción
C3181N Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic
Número de pieza
componentes Descripción
Fabricante
C3181N
Silicon NPN Power Transistors
Quanzhou Jinmei Electronic
C3181N Datasheet PDF : 4 Pages
1
2
3
4
JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=50mA ,I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=6A; I
B
=0.6A
V
BE
Base-emitter voltage
I
C
=4A ; V
CE
=5V
I
CBO
I
EBO
h
FE-1
Collector cut-off current
Emitter cut-off current
DC current gain
V
CB
=120V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
h
FE-2
DC current gain
I
C
=4A ; V
CE
=5V
f
T
Transition frequency
I
C
=1A ; V
CE
=5V
C
ob
Output capacitance
I
E
=0 ; V
CB
=10V ;f=1MHz
h
FE-1
Classifications
R
O
55-110
80-160
Product Specification
2SC3181N
MIN TYP. MAX UNIT
120
V
2.0
V
1.5
V
5
μ
A
5
μ
A
55
160
35
30
MHz
190
pF
2
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