IXFC16N80P Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFC16N80P Datasheet PDF : 2 Pages
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IXFC 16N80P
Symbol
gfs
C
iss
C
oss
C
rss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
VDS= 20 V; ID = IT, pulse test
9
16
S
V = 0 V, V = 25 V, f = 1 MHz
GS
DS
4600
pF
330
pF
23
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 5 Ω (External)
27
ns
32
ns
75
ns
29
ns
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
71
nC
21
nC
23
nC
0.82 ° C/W
0.21
° C/W
ISOPLUS220TM (IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0 V
16 A
I
Repetitive
SM
48 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
1.5 V
trr
IF = 16 A, -di/dt = 100 A/µs
IRM
VR = 100 V, VGS = 0 V
Q
RM
250 ns
7
A
0.8
µC
Note 1: Test Current IT = 8 A
Ref: IXYS CO 0177 R0
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated objective result. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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