MJE13005A Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
MJE13005A Datasheet PDF : 6 Pages
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SEMICONDUCTOR
MJE13005A(NPN) RRooHHSS
Nell High Power Products
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
Rth(j-a)
Maximum thermal resistance, junction to ambient
VALUE
1.67
62.5.
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
ICEV
Collector cutoff current
ICEO
Collector cutoff current
VCE = 700V, VBE(off) = 1.5V
VCE = 700V, VBE(off) = 1.5V, TC = 100°C
VCE = 400V, lB = 0
1.0
5.0
mA
0.1
IEBO
Emitter cutoff current
VEBO = 9V, lC = 0
1.0
VCEO(SUS)* Collector to emitter sustaining voltage lC = 10mA, lB = 0
400
V(BR)CEV Collector to base breakdown voltage
lC = 10mA, VBE = 0
700
V
V(BR)EBO Emitter to base breakdown voltage
lE = 10mA, lC = 0
9
ON CHARACTERISTICS
Forward current transfer ratio
hFE
(DC current gain)
lC = 1A, VCE = 5V
lC = 2A, VCE = 5V
10
60
8
40
VCE(sat)* Collector to emitter saturation voltage
lC = 1A, IB = 0.2A
lC = 2A, lB = 0.5A
lC = 4A, lB = 1A
0.5
0.6
V
1.0
IC = 2A, lB = 0.5A, TC = 100°C
1.0
VBE(on)* Base to emitter on voltage
DYNAMIC CHARACTERISTICS
lC = 1A, IB = 0.2A
lC = 2A, lB = 0.5A
lC = 2A, lB = 0.5A, TC = 100°C
1.2
1.6
V
1.5
Transition frequency
fT
(Current gain- Bandwidth product )
lC = 0.5A, VCE = 10V, ftest = 1MHz
4
MHZ
Cob
Output capacitance
SWITCHING CHARACTERISTICS
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
*Pulsed : Pulse duration = 300 µs, duty cycle = 2%.
www.nellsemi.com
VCB = 10V, lE = 0, ftest = 0.1MHz
VCC = 125V, IC = 2A
IB1 = IB2 =0.4A, tp = 25µs
duty clcye ≤1%
Page 2 of 6
65
pF
0.03 0.1
0.35 0.7
µs
2.0 4.0
0.45 0.9
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