IRF054SMD Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
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IRF054SMD Datasheet PDF : 2 Pages
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SEME
LAB
IRF054SMD
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 1
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance 1
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 28A
ID = 45A
ID = 250mA
IDS = 28A
VDS = 0.8BVDSS
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 45A
VDS = 0.5BVDSS
ID = 45A
VDS = 0.5BVDSS
VDD = 30V
ID = 45A
RG = 2.35W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn–On Time
IS = 45A
TJ = 25°C
VGS = 0
IF = 45A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance (from centre of drain pad to die)
LS
Internal Source Inductance (from centre of source pad to end of source bond wire)
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Min. Typ. Max. Unit
60
V
0.68
V/°C
0.027 W
0.031
2
4
V
20
S((WW)
25
mA
250
100
nA
–100
4600
2000
pF
340
80
180 nC
20
45
nC
34
105
33
180
ns
100
100
45
A
180
2.5
V
280 ns
2.2 mC
Negligible
0.8
nH
2.8
Prelim. 7/00
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