MJE13004 Ver la hoja de datos (PDF) - Continental Device India Limited
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MJE13004 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTORS
MJE13004
MJE13005
TO-220
Plastic Package
Switchmode Series NPN Silicon Power Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
*Peak
Base Current Continuous
*Peak
Emitter Current Continuous
*Peak
Power Dissipation upto Ta=25ºC
Derate above=25ºC
Power Dissipation upto Tc=25ºC
Derate above=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO (sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
Tj, Tstg
* Pulse Test: Pulse Width =5ms, Duty Cycle<10%
MJE13004
300
600
MJE13005
400
700
9
4
8
2
4
6
12
2
16
75
600
- 65 to +150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Maxmium Lead Temperature for
Soldering Purpose 1/8" from Case for 5
Seconds
Rth (j-c)
Rth (j-a)
TL
1.67
ºC/W
62.5
ºC/W
275
ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter sustaining voltage **VCEO(sus)
IC=10mA, IB=0
MJE13004
300
MJE13005
400
Collector Cut off Current
ICEV VCEV=Rated Value,VBE=(off)=1.5V
TC=100ºC
VCEV=Rated Value,VBE=(off)=1.5V
Emitter Cut off Current
IEBO
VEB=9V, IC=0
DC Current Gain
**hFE
IC=1A, VCE=5V
10
IC=2A, VCE=5V
8
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
TYP
MAX
1.0
5.0
1.0
60
40
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4
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