H7N1004AB Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
H7N1004AB Datasheet PDF : 8 Pages
| |||
H7N1004AB
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
6V
40
Pulse Test
4V
30
3.5 V
20
10
VGS = 3 V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
ID = 20 A
0.4
10 A
0.2
5A
0
0
5
10
15
20
Gate to Source Voltage VGS (V)
REJ03G1579-0100 Rev.1.00 Sep 03, 2007
Page 3 of 7
Maximum Safe Operation Area
200
100
50
20
1 ms
100
10
µs
µs
10
5
PW = 10 ms
(1 shot)
2
1
DC Operation
(Tc = 25°C)
0.5
Operation in
0.2 this area is
0.1 limited by RDS (on)
0.05
Ta = 25°C
0.02
0.1 0.3 1 3 10 30
100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = –25°C
10
25°C
75°C
0
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
VGS = 4.5 V
20
10 V
10
5
12
5 10 20 50 100
Drain Current ID (A)
Share Link: 