H7N1004AB Ver la hoja de datos (PDF) - Renesas Electronics

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H7N1004AB

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

H7N1004AB

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS (on) =25 mΩ typ.

• Low drive current

• Available for 4.5 V gate drive

Outline

RENESAS Package code: PRSS0004AC-A

(Package name: TO-220AB )

4

G

123

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 ms, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Value at Tc = 25°C

Symbol

VDSS

VGSS

ID

ID(pulse) Note1

IDR

IAP Note2

EAR Note2

Pch Note3

Tch

Tstg

REJ03G1579-0100

Rev.1.00

Sep 03, 2007

D

1. Gate

2. Drain

3. Source

4. Drain

S

Value

100

±20

30

100

30

15

22.5

50

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

mJ

W

°C

°C

REJ03G1579-0100 Rev.1.00 Sep 03, 2007

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