H7N1004DL Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
H7N1004DL Datasheet PDF : 9 Pages
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H7N1004DL, H7N1004DS
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
10 V
20 5 V
VGS = 0, –5 V
10
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
40
IAP = 15 A
32
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
24
16
8
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
3
D=1
1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
0.3 0.2
0.1
0.1
0.05
0.03 0.02
0.01
0.01
1 shot
pulse
0.003
0.001
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.1.00 Nov 07, 2006 page 5 of 8
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