H7N1004LD Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

H7N1004LD

Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Electronics 

H7N1004LD, H7N1004LS, H7N1004LM

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

D=1

Tc = 25°C

0.5

0.3

0.2

0.1 0.1

0.05

0.02

0.03

0.01

1shot

pulse

0.01

10 µ

100 µ

θch - c(t) = γs (t) • θ ch - c

θch - c = 2.5°C/ W, Tc = 25°C

PDM

PW

T

D=

PW

T

1m

10 m

100 m

1

10

Pulse Width PW (s)

Switching Time Test Circuit

Vin Monitor

Rg

D.U.T.

Vout

Monitor

RL

Vin

10 V

VDS

= 30 V

Switching Time Waveform

Vin 10%

Vout 10%

90%

td(on)

tr

90%

10%

90%

td(off)

tf

Rev.6.00, Aug.27.2003, page 8 of 11

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