2SJ418
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW≤10µs, duty cycle≤1%
Tc=25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Marking : J418
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–4A
ID=–4A, VGS=–10V
ID=–4A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–8A, VGS=0
Switching Time Test Circuit
VIN
0V
—10V
VIN
PW=10s
D.C.≤1%
VDD=—15V
ID=—4A
RL=3.75Ω
D
VOUT
G
2SJ418
P.G
50Ω
S
Ratings
Unit
–30 V
±20 V
–8 A
–32 A
1.0 W
30 W
150 ˚C
–55 to +150 ˚C
Ratings
Unit
min typ max
–30
V
–100 µA
±10 µA
–1.0
–2.5 V
3
7
S
60
80 mΩ
105 145 mΩ
800
pF
500
pF
140
pF
15
ns
60
ns
170
ns
90
ns
–1.0 –1.2 V
No.5298–2/4