Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 μAdc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
V(BR)DSS
65
IDSS
—
IGSS
—
VGS(th)
2
VGS(Q)
2.5
VDS(on)
—
Crss
—
Gps
11
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
η
31
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
IMD
—
Input Return Loss
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
IRL
—
Pout, 1 dB Compression Point
(VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz)
1. Part is internally matched both on input and output.
P1dB
—
Typ
—
—
—
—
3.9
0.27
2.7
12.5
34
- 30
- 12
60
Max
Unit
—
Vdc
6
μAdc
1
μAdc
4
Vdc
4.5
Vdc
—
Vdc
—
pF
—
dB
—
%
- 28
dBc
—
dB
—
W
MRF21060LR3 MRF21060LSR3
2
RF Device Data
Freescale Semiconductor