MRF21060L Ver la hoja de datos (PDF) - Freescale Semiconductor
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MRF21060L Datasheet PDF : 8 Pages
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and
multicarrier amplifier applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 12.5 dB
Drain Efficiency — 15%
ACPR @ 5 MHz Offset — - 47 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Document Number: MRF21060
Rev. 9, 5/2006
MRF21060LR3
MRF21060LSR3
2110 - 2170 MHz, 60 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21060LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF21060LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
180
0.98
- 65 to +150
150
200
Value
1.02
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF21060LR3 MRF21060LSR3
1
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