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Número de pieza
componentes Descripción
HAT1026R Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
HAT1026R
Silicon P Channel Power MOS FET
Hitachi -> Renesas Electronics
HAT1026R Datasheet PDF : 7 Pages
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HAT1026R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 20 A/µs
5
V
GS
= 0, Ta = 25°C
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I
DR
(A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
0
0
V
DD
= –5 V
–10 V
–10
–25 V
–4
–20
V
GS
–30
V
DD
= –25 V
–10 V
–40
–5 V
V
DS
–50
I
D
= –7 A
0
16
32 48 64
Gate Charge Qg (nc)
–8
–12
–16
–20
80
1000
500
200
100
50
Switching Characteristics
tr
tf
t
d(off)
t
d(on)
20
10
–0.1 –0.2
V
GS
= –4 V, V
DD
= –10 V
PW = 3 µs, duty < 1 %
–0.5 –1 –2 –5 –10
Drain Current I
D
(A)
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