HAT1026R Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
HAT1026R Datasheet PDF : 7 Pages
| |||
HAT1026R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
–30
Gate to source voltage
VGSS
±20
Drain current
ID
–7
Drain peak current
ID(pulse)Note1
–56
Body–drain diode reverse drain current IDR
–7
Channel dissipation
Pch Note2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Item
Symbol Min
Drain to source breakdown V(BR)DSS –30
voltage
Gate to source breakdown V(BR)GSS ±20
voltage
Gate to source leak current IGSS
—
Zero gate voltege drain
IDSS
—
current
Gate to source cutoff voltage VGS(off) –1.0
Static drain to source on
state
resistance
RDS(on) —
RDS(on) —
Forward transfer admittance |yfs|
8
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward VDF
—
voltage
Body–drain diode reverse trr
—
recovery time
Note: 3. Pulse test
Typ
—
Max
—
Unit
V
—
—
V
—
±10
µA
—
–10
µA
—
–2.5 V
0.028 0.037 Ω
0.04 0.065 Ω
12
—
S
1700 —
pF
1000 —
pF
190
—
pF
60
—
ns
330
—
ns
80
—
ns
120
—
ns
–0.9 –1.4 V
70
—
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10V, I D =
–1mA
ID = –4A, VGS = –10V
Note3
ID = –4A, VGS = –4V
Note3
ID = –4A, VDS = –10V
Note3
VDS = –10V
VGS = 0
f = 1MHz
VGS = –4V, ID = –4A
VDD Ň –10V
IF = –7A, VGS = 0
IF = –7A, VGS = 0
diF/ dt =20A/µs
Share Link: 