50RIA60 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
50RIA60 Datasheet PDF : 8 Pages
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Switching
Parameter
di/dt
td
Max. rate of rise of turned-on
current
VDRM ≤ 600V
VDRM ≤ 1600V
Typical delay time
tq
Typical turn-off time
50RIA Series
Bulletin I2401 rev. A 07/00
50RIA
200
100
0.9
110
Units Conditions
A/µs
µs
TC = 125°C, VDM = rated VDRM
Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max.
ITM = (2x rated di/dt) A
TC = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit
Gate pulse = 10V, 15Ω source, tp = 20µs
TC = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs
dir/dt = -10A/µs, VR=50V
Blocking
Parameter
50RIA
Units Conditions
dv/dt Max. critical rate of rise of
off-state voltage
200
500 (*)
V/µs
TJ = TJ max. linear to 100% rated VDRM
TJ = TJ max. linear to 67% rated VDRM
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
PGM
PG(AV)
IGM
+VGM
Maximum peak gate power
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required
to trigger
VGT DC gate voltage required
to trigger
IGD DC gate current not to trigger
VGD DC gate voltage not to trigger
50RIA
10
2.5
2.5
20
10
250
100
50
3.5
2.5
5.0
0.2
Units Conditions
W
TJ = TJ max, tp ≤ 5ms
A
V
TJ = - 40°C
mA TJ = 25°C
Max. required gate trigger
current/voltage are the
TJ = 125°C
TJ = - 40°C
lowest value which will trigger
all units 6V anode-to-cathode
applied
V TJ = 25°C
mA
TJ = TJ max
VDRM = rated voltage
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V TJ = TJ max
VDRM anode-to-cathode applied
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