2SK3469-01MR Ver la hoja de datos (PDF) - Fuji Electric
Número de pieza
componentes Descripción
Fabricante
2SK3469-01MR Datasheet PDF : 4 Pages
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2SK3469-01MR
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
max.
0.6
0.5
typ.
0.4
0.3
0.2
0.1
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=12A, Tch=25°C
24
22
20
Vcc= 120V
18
300V
16
480V
14
12
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10n
Ciss
1n
100p
Coss
10p
1p
10-1
Crss
100
101
102
103
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
102
tr
10
td(off)
td(on)
101
tf
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
100
100
101
ID [A]
3
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