IRF60DM206 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRF60DM206

DirectFET® N-Channel Power MOSFET

International Rectifier 

IRF60DM206

1000

1000

100

TJ = 150°C

10

TJ = 25°C

1

VGS = 0V

0.1

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

VSD, Source-to-Drain Voltage (V)

Fig 9. Typical Source-Drain Diode Forward Voltage

70

Id = 1.0mA

68

100

10

OPERATION IN

THIS AREA

LIMITED BY

RDS(on)

100µsec

1msec

1

10msec

DC

0.1 Tc = 25°C

Tj = 150°C

Single Pulse

0.01

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 10. Maximum Safe Operating Area

1.2

1.0

66

0.8

64

0.6

62

0.4

60

0.2

58

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Temperature ( °C )

Fig 11. Drain-to-Source Breakdown Voltage

0.0

-10 0 10 20 30 40 50 60

VDS, Drain-to-Source Voltage (V)

Fig 12. Typical Coss Stored Energy

10

9

VGS = 5.5V

VGS = 6.0V

8

VGS = 7.0V

VGS = 8.0V

VGS = 10V

7

6

5

4

3

2

1

0 20 40 60 80 100 120 140 160 180 200

ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

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June 04, 2015

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