2SA1162 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

2SA1162

Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SA1162

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0

-50

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100μA,IC=0

-5

V

Collector cut-off current

ICBO

Emitter cut-off current

IEBO

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

Transition frequency

fT

Collector output capacitance

Cob

Noise figure

NF

VCB=-50V,IE=0

VEB=-5V,IC=0

VCE=-6V,IC=-2mA

70

IC=-100mA, IB=-10mA

VCE=-10V, IC=-1mA

80

VCB=-10V,IE=0,f=1MHz

VCE=-6V,IC=0.1mA,

f=1MHz,Rg=10kΩ

-0.1 μA

-0.1 μA

400

-0.1 -0.3 V

MHz

4

7

pF

1.0 10 dB

CLASSIFICATION OF hFE(1)

Rank

O

Y

G

Range

70-140

120-240

200-400

Document number: BL/SSSTC0092

Rev.A

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