CNY75B Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

CNY75B

Optocoupler with Phototransistor Output

Vishay Semiconductors 

CNY75(G) Series

Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.

This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters

Forward current

Output (Detector)

Test Conditions

Symbol

Value

Unit

Isi

130

mA

Parameters

Power dissipation

Coupler

Test Conditions

Symbol

Value

Unit

Tamb ≤ 25°C

Psi

265

mW

Parameters

Rated impulse voltage

Safety temperature

Test Conditions

Symbol

Value

Unit

VIOTM

6

kV

Tsi

150

°C

Insulation Rated Parameters (according to VDE 0884)

Parameter

Test Conditions

Symbol Min. Typ. Max.

Unit

Partial discharge test voltage – 100%, ttest = 1 s

Vpd

1.6

kV

Routine test

Partial discharge test voltage – tTr = 60 s, ttest = 10 s, VIOTM

6

kV

Lot test (sample test)

Insulation resistance

(see figure 2)

VIO = 500 V

VIO = 500 V,

Vpd

1.3

RIO

1012

RIO

1011

kV

W

W

Tamb ≤ 100°C

VIO = 500 V,

RIO

109

W

Tamb ≤ 150°C

(construction test only)

275

250

225

Psi

(mW)

200

175

150

125

100

VIOTM

V

VPd

VIOWM

VIORM

t1, t2 = 1 to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

75

50

25

0

0

95 10923

Isi (mA)

25 50 75 100 125 150 175

Tamb – Ambient Temperature ( °C

)

0

t1

13930

tTr = 60 s

t3 ttest t4

t2 tstres

t

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

144

Rev. A4, 11–Jan–99

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