BUP313D Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BUP313D Datasheet PDF : 8 Pages
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BUP 313D
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 15 A
20
V
VGE 16
14
600 V
800 V
12
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80
100
QGate
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
nF
C
10 0
Ciss
10 -1
Coss
Crss
10 -2
0
5 10 15 20 25 30 V 40
VCE
Short circuit safe operating area
ICsc = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH
Reverse biased safe operating area
ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = 15 V
10
2.5
ICsc/IC(90°C)
6
ICpuls/IC
1.5
4
1.0
2
0
0 200 400 600 800 1000 1200 V 1600
VCE
0.5
0.0
0
200 400 600 800 1000 1200 V 1600
VCE
Semiconductor Group
7
Dec-02-1996
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