BFX89 Ver la hoja de datos (PDF) - Comset Semiconductors

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componentes Descripción

Fabricante

BFX89

WIDE BAND VHF/UHF AMPLIFIER

Comset Semiconductors 

BFX89

BFY90

WIDE BAND VHF/UHF AMPLIFIER

• SILICON PLANAR EPITAXIAL TRANSISTORS

• TO-72 METAL CASE

• VERY LOW NOISE

APPLICATIONS :

• TELECOMMUNICATIONS

• WIDE BAND UHF AMPLIFIER

• RADIO COMMUNICATIONS

The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using

interdigitated base emitter geometry. They are particulary designed for use in wide

band common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low

reverse capacitance, excellent cross modulation properties and very low noise

performance. The BFY90 is complementary to the BFR99A. Typical applications

include telecommunication and radio communication equipment.

ABSOLUTE MAXIMUM RATINGS

Symbol

VCEO

VCER

VCBO

VEBO

IC

ICM

Ptot

Tstg, Tj

Ratings

Collector-Emitter Voltage ( IB = 0)

Collector-Emitter Voltage ( RBE ≤50Ω )

Collector-Base Voltage ( IE= 0)

Collector-Base Voltage ( IC = 0)

Collector Current

Collector Peak Current

Total Power Dissipation at Tamb ≤ 25 °C

Storage and Junction Temperature

Value

15

30

30

2.5

25

50

200

-65 to 200

Unit

V

V

V

V

mA

mA

mW

°C

COMSET SEMICONDUCTORS

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