BFX89(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
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componentes Descripción
Fabricante
BFX89 Datasheet PDF : 4 Pages
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BFX89 – BFY90
WIDE BAND VHF/UHF AMPLIFIER
DESCRIPTION :
• SILICON PLANAR EPITAXIAL
TRANSISTORS
• TO-72 METAL CASE
• VERY LOW NOISE
APPLICATIONS :
• TELECOMMUNICATIONS
• WIDE BAND UHF AMPLIFIER
• RADIO COMMUNICATIONS
The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using
interdigitated base emitter geometry. They are particulary designed for use in wide band
common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low reverse
capacitance, excellent cross modulation properties and very low noise performance. The
BFY90 is complementary to the BFR99A. Typical applications include telecommunication
and radio communication equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCER
VCBO
VEBO
IC
ICM
Ptot
Tstg, Tj
Collector-Emitter Voltage ( IB = 0)
Collector-Emitter Voltage ( RBE ≤50Ω )
Collector-Base Voltage ( IE= 0)
Collector-Base Voltage ( IC = 0)
Collector Current
Collector Peak Current
Total Power Dissipation at Tamb ≤ 25 °C
Storage and Junction Temperature
Value
15
30
30
2.5
25
50
200
-65 to 200
Unit
V
V
V
V
mA
mA
mW
°C
25/10/2012
COMSET SEMICONDUCTORS
1/4
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