DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FDU6680A Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
FDU6680A
Fairchild
Fairchild Semiconductor Fairchild
FDU6680A Datasheet PDF : 5 Pages
1 2 3 4 5
Typical Characteristics
10
ID = 14A
8
6
4
2
0
0
10
VDS = 5V
1 0V
15V
20
30
40
50
Qg, GATE CHARGE (nC)
350 0
300 0
250 0
200 0
150 0
100 0
50 0
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
25
30
VDS, DR AIN TO SOURC E VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1000
100
RD S(ON) LIM IT
10
1
VGS = 10V
SINGLE PULSE
0.1
R θJA = 96 oC/W
TA = 25oC
100µ s
1m s
10 m s
100ms
1s
1 0s
DC
0.01
0.1
1
10
100
VDS, DR AIN -SOU RCE VOLTAGE (V)
200
150
100
50
0
0.001
0.01
SINGLE PULSE
Rθ JA = 9 6 °C /W
TA = 25°C
0.1
1
t1, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
0.001
D = 0.5
0.2
0.1
0.05
0.01
0.02
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA = 96°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t 1 / t 2
10
100
300
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6680A/FDU6680A Rev. C(W)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]