FDU6680A Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
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Fabricante
FDU6680A Datasheet PDF : 5 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=14A
IAS
Drain-Source Avalanche Current
200 mJ
56
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V,
VGS = 20 V,
VGS = –20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
30
23
V
mV/°C
1
µA
100 nA
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 14 A,TJ=125°C
VGS = 10 V, VDS = 5 V
VDS = 5 V,
ID = 9.5 A
1 1.5
-4
3
V
mV/°C
8
9.5 mΩ
10 13
12 16
50
A
41
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
2180
pF
500
pF
255
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 40V,
VGS = 5 V
ID = 9.5 A,
13 24
ns
14 26
ns
43 70
ns
15 27
ns
23 33
nC
7
nC
11
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.3
A
VSD
Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2)
0.72 1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 45°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Scale 1 : 1 on letter size paper
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6680A/FDU6680A Rev. C(W)
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