2SK3235 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK3235 Datasheet PDF : 12 Pages
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2SK3235
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1371 (Z)
1st. Edition
Mar. 2001
Features
• Low on-resistance: RDS(on) = 0.3 Ω typ.
• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
• High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)
• Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A)
• Avalanche ratings
Outline
TO-3P
D
G
S
1
2
3
1. Gate
2. Drain (Flange)
3. Source
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