2SK3108 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
2SK3108 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.2
1.0
ID = 8.0 A
0.8
0.6
ID = 4.0 A
0.4
0.2
VGS = 10 V
Pulsed
0
− 50 − 25 0 25 50 75 100 125 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
100
10
0.1
Coss
Crss
1
10
100
1000
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 50A / µs
VGS = 0 V
1
10
100
ID - Drain Current - A
2SK3108
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
VGS = 10 V
1
VGS = 0 V
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source to Drain Voltage - V
1000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td(off)
td(on)
1
0.1
VDD = 100 V
VGS = 10 V
RG = 10 Ω
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
200
16
ID = 8.0 A
14
150
VDD = 160 V
12
100 V
40 V
10
100
8
6
50
VDD = 160 V
4
100 V
40 V
2
0
0
0
5
10
15
20
QG - Gate Charge - nC
4
Data Sheet D13331EJ1V0DS00
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