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1N5614GP(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
1N5614GP
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
1N5614GP Datasheet PDF : 4 Pages
1 2 3 4
1N5614GP thru 1N5622GP
Vishay General Semiconductor
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.4
Pulse Width = 300 µs
1 % Duty Cycle
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
10
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
0
TJ = 25 °C
20
40
60
80
100
Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
MIN.
0.140 (3.6)
0.104 (2.6)
DIA.
Document Number: 88520 For technical questions within your region, please contact one of the following:
Revision: 03-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3

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