BTS244Z Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BTS244Z Datasheet PDF : 10 Pages
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Drain-source break down voltage
V(BR)DSS = f(Tj)
66
V
62
60
BTS 244 Z
Forward charcteristics of reverse diode
IF = f(VSD); tp = 80µs (spread)
Parameter: Tj
10 2
A
150°C
10 1
25°C
58
56
10 0
54
52
50-40
0
40
80
120 °C 180
Tj
Typ. gate charge
VGS = f(QGate); ID puls = 47A
10 -1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6
VSD
Typ. capacitances
C = f(VDS); VGS=0 V, f=1 MHz
BTS 244 Z
16
V
12
10
8
0,2 VDS max
6
0,8 VDS max
4
2
00
20 40 60 80 100 nC 140
QGate
Semiconductor Group
9
10 1
nF
Ciss
10 0
Coss
Crss
10 -1
0 4 8 12 16 20 24 28 32 V 40
VDS
1999-03-04
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