03N60Z Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

03N60Z

600V / N-Channel Power MOSFET

ON Semiconductor 

NDF03N60Z, NDD03N60Z

THERMAL RESISTANCE

Junction−to−Case (Drain)

Parameter

NDF03N60Z

NDD03N60Z

Symbol

RqJC

Value

4.7

2.0

Unit

°C/W

Junction−to−Ambient Steady State

(Note 3) NDF03N60Z

RqJA

51

(Note 4) NDD03N60Z

40

(Note 3) NDD03N60Z−1

80

3. Insertion mounted

4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Breakdown Voltage Temperature Co-

efficient

VGS = 0 V, ID = 1 mA

Reference to 25°C,

ID = 1 mA

BVDSS

600

DBVDSS/

0.6

DTJ

V

V/°C

Drain−to−Source Leakage Current

VDS = 600 V, VGS = 0 V

25°C

150°C

IDSS

1

mA

50

Gate−to−Source Forward Leakage

VGS = ±20 V

IGSS

±10

mA

ON CHARACTERISTICS (Note 5)

Static Drain−to−Source

On−Resistance

VGS = 10 V, ID = 1.2 A

RDS(on)

3.3

3.6

W

Gate Threshold Voltage

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 6)

Output Capacitance (Note 6)

Reverse Transfer Capacitance

(Note 6)

VDS = VGS, ID = 50 mA

VDS = 15 V, ID = 1.5 A

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

VGS(th)

3.0

3.9

4.5

V

gFS

2.0

S

Ciss

248

312

372

pF

Coss

30

39

50

Crss

4

8

12

Total Gate Charge (Note 6)

Gate−to−Source Charge (Note 6)

Gate−to−Drain (“Miller”) Charge

(Note 6)

VDD = 300 V, ID = 3.0 A,

VGS = 10 V

Qg

6

12

18

nC

Qgs

1.5

2.5

4

Qgd

3

6.1

9

Plateau Voltage

VGP

6.4

V

Gate Resistance

Rg

6.0

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

td(on)

9

ns

Rise Time

Turn−Off Delay Time

VDD = 300 V, ID = 3.0 A,

tr

8

VGS = 10 V, RG = 5 W

td(off)

16

Fall Time

tf

10

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)

Diode Forward Voltage

IS = 3.0 A, VGS = 0 V

VSD

1.6

V

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0 V, VDD = 30 V

trr

IS = 3.0 A, di/dt = 100 A/ms

Qrr

265

ns

0.9

mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

6. Guaranteed by design.

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