TPCA8057-H
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
VGS = ±20 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -20 V
VDS = 10 V, ID = 0.5 mA
VGS = 4.5 V, ID = 21 A
VGS = 10 V, ID = 21 A
Min Typ. Max Unit
±0.1
µA
10
30
V
15
1.3
2.3
2.6
3.2
mΩ
2.0
2.6
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Ciss
Crss
Coss
rg
tr
ton
tf
toff
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 5 MHz
See Fig. 6.2.1.
Min Typ. Max Unit
4300 5200 pF
240 370
810
1.4
2.1
Ω
4.3
ns
14
6.3
52
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Test Condition
Qg
Qgs1
Qgd
QSW
VDD ≈ 24 V, VGS = 10 V, ID = 42 A
VDD ≈ 24 V, VGS = 5 V, ID = 42 A
VDD ≈ 24 V, VGS = 10 V, ID = 42 A
Min Typ. Max Unit
61
nC
31
13
7.7
14
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed)
(Note 5)
IDRP
Diode forward voltage
VDSF IDR = 42 A, VGS = 0 V
Note 5: Ensure that the channel temperature does not exceed 150 .
Min Typ. Max Unit
126
A
-1.2
V
3
2014-03-04
Rev.2.0