IXFH28N50F(2003) Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFH28N50F Datasheet PDF : 2 Pages
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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247)
Characteristic Values
Min. Typ.
Max.
12
18
S
3000
pF
500
pF
130
pF
15
ns
13
ns
41
ns
8
ns
95
nC
20
nC
38
nC
0.21
0.39 °C/W
°C/W
Source-Drain Diode
TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IF = 28A, -di/dt = 100A/μs
IRM
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
28 A
112 A
1.5 V
250 ns
1.0
μC
12
A
IXFH28N50F
IXFT28N50F
TO-247 (IXFH) Outline
∅P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Min Recommended Footprint
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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