4NF20L Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
4NF20L Datasheet PDF : 12 Pages
| |||
Electrical characteristics
2
Electrical characteristics
STN4NF20L
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V, VDS=0
Gate threshold voltage VGS = VDS, ID = 250 µA
Static drain-source on VGS = 10 V, ID = 0.5 A
resistance
VGS = 5 V, ID = 0.5 A
Min. Typ. Max. Unit
200
V
1 µA
50 µA
± 100 nA
1
2
3
V
1.1 1.5 Ω
1.13 1.55 Ω
Table 6. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Instrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
f=1 MHz open drain
VDD = 160 V, ID = 1 A,
VGS = 10 V
(see Figure 13)
Min. Typ. Max. Unit
150
pF
-
30
- pF
4
pF
-
5.5
-
Ω
0.9
nC
-
2.6
- nC
6.9
nC
Table 7.
Symbol
Switching times
Parameter
td(v)
tr
tf
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 100 V, ID = 0.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 12)
Min.
-
Typ.
3.6
2
10.4
15.4
Max Unit
ns
ns
-
ns
ns
4/12
Doc ID 17445 Rev 2
Share Link: 