BC327 Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
BC327 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistor
Product specification
BC327
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
0.2
UNIT
K/mW
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBE
Cc
fT
collector cut-off current
emitter cut-off current
IE = 0; VCB = −20 V
−
−
IE = 0; VCB = −20 V; Tj = 150 °C −
−
IC = 0; VEB = −5 V
−
−
DC current gain
BC327
IC = −100 mA; VCE = −1 V;
see Figs 2, 3 and 4
100 −
BC327-16
100 −
BC327-25
160 −
BC327-40
250 −
DC current gain
IC = −500 mA; VCE = −1 V;
see Figs 2, 3 and 4
40 −
collector-emitter saturation voltage IC = −500 mA; IB = −50 mA
−
−
base-emitter voltage
collector capacitance
transition frequency
IC = −500 mA; VCE = −1 V; note 1 −
−
IE = ie = 0; VCB = −10 V; f = 1 MHz −
10
IC = −10 mA; VCE = −5 V;
f = 100 MHz
80 −
−100 nA
−5 µA
−100 nA
600
250
400
600
−
−700
−1.2
−
−
mV
V
pF
MHz
Note
1. VBE decreases by about −2 mV/K with increasing temperature.
1999 Apr 15
3
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