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2N2222A

Silicon NPN Transistor Small Signal General Purpose Amplifier & Switch

NTE Electronics 

2N2222A

Silicon NPN Transistor

Small Signal General Purpose Amplifier & Switch

Absolute Maximum Ratings: (TA = +25C unless otherwise specified)

Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA

Total Device Dissipation, PD

TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C

Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325C/W

Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W

Note 1. Stresses exceeding Absolute Maximum Ratings may damage the devices. Maximum ratings

are stress ratings only. Functional operation above the Recommended Operating Conditions

is not implied. Extended exposure to stresses above the Recommended Operating Conditions

may affect device reliability.

Electrical Characteristics: (TA = 25C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector−Emitter Breakdown Voltage

Collector−Base Cutoff Current

Emitter−Base Cutoff Current

Collector−Emitter Cutoff Current

V(BR)CEO IC = 10mA

ICBO VCB = 60V

VCB = 75V

IEBO VEB = 4V

VEB = 6V

ICES VCE = 50V

Min Typ Max Unit

50 −

−

V

−

− 10

nA

−

− 10

A

−

− 10

nA

−

− 10

A

−

− 50

nA

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