DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

13N03LA Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
13N03LA
Infineon
Infineon Technologies Infineon
13N03LA Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
13 Avalanche characteristics
I AS=f(t AV); R GS=25
parameter: T j(start)
100
150 °C
100 °C
IPD13N03LA G IPF13N03LA G
IPS13N03LA G IPU13N03LA G
14 Typ. gate charge
V GS=f(Q gate); I D=25 A pulsed
parameter: V DD
12
15 V
10
25 °C
8
5V
20 V
10
6
4
2
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
1000
0
0
2
4
6
8 10 12 14
Q gate [nC]
16 Gate charge waveforms
Rev. 2.2
29
V GS
28
27
26
25
24
V g s(th)
23
22
21
20
-60
-20
20
60 100 140 180
T j [°C]
Q g(th)
Q gs
page 7
Qg
Q sw
Q gd
Q gate
2008-04-14

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]