13N03LA Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
13N03LA Datasheet PDF : 12 Pages
| |||
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
24
IPD13N03LA G IPF13N03LA G
IPS13N03LA G IPU13N03LA G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.5
20
16
98 %
12
typ
8
4
2
200 µA
1.5
20 µA
1
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. Capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
103
1000
102
100
Ciss
Coss
Crss
100
10
25 °C
175 °C
175 °C, 98%
25 °C, 98%
101
10
0
Rev. 2.2
5
10
15
20
25
30
V DS [V]
1
0.0
page 6
0.5
1.0
1.5
V SD [V]
2.0
2008-04-14
Share Link: 