13NO3LA Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

13NO3LA

OptiMOS2 Power-Transistor

Infineon Technologies 

OptiMOS®2 Power-Transistor

Features

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC1) for target applications

• N-channel, logic level

• Excellent gate charge x R DS(on) product (FOM)

• Superior thermal resistance

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

IPD13N03LA G IPF13N03LA G

IPS13N03LA G IPU13N03LA G

Product Summary

V DS

R DS(on),max

ID

25 V

12.8 mΩ

30 A

Type

IPD13N03LA

IPF13N03LA

IPS13N03LA

IPU13N03LA

Package

Marking

P-TO252-3-11

13N03LA

P-TO252-3-23

13N03LA

P-TO251-3-11

13N03LA

P-TO251-3-1

13N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

ID

T C=25 °C2)

Pulsed drain current

I D,pulse

T C=100 °C

T C=25 °C3)

Avalanche energy, single pulse

E AS

I D=24 A, R GS=25 Ω

Reverse diode dv /dt

dv /dt

I D=30 A, V DS=20 V,

di /dt =200 A/µs,

T j,max=175 °C

Gate source voltage4)

V GS

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

Value

30

30

210

60

6

±20

46

-55 ... 175

55/175/56

Unit

A

mJ

kV/µs

V

W

°C

Rev. 2.2

page 1

2008-04-14

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