2N7002 Ver la hoja de datos (PDF) - NTE Electronics

Número de pieza

componentes Descripción

Fabricante

2N7002

N−Ch, Enhancement Mode Field Effect Transistor SOT−23 Type Package

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)

ON Characteristics (Note 1)

Gate Threshold Voltage

Static Drain−Source ON Resistance

Drain−Source ON−Voltage

ON−State Drain Current

Forward Transconductance

Dynamic Characteristics

VGS(th)

rDS(on)

VDS(on)

ID(on)

gFS

ID = 250A, VDS = VGS

VGS = 10V,

ID = 500mA

TJ = +100C

VGS = 5V,

ID = 50mA

TJ = +100C

VGS = 10V, ID = 500mA

VGS = 5V, ID = 50mA

VGS = 10V, VDS  2 VDS(on)

VDS  2 VDS(on), ID = 200mA

1.0 2.1 2.5

V

− 1.2 7.5



− 1.7 13.5 

− 1.7 7.5



− 2.4 13.5 

− 0.6 3.75 V

− 0.09 1.5

V

500 2700 −

mA

80 320 −

mS

Input Capacitance

Ciss VDS = 25V, VGS = 0V, f = 1MHz

− 20 50

pF

Reverse Transfer Capacitance

Coss

− 11 25 pF

Output Capacitance

Crss

−4 5

pF

Turn−On Time

Turn−Off Time

ton

VDD = 30V, RL = 150,

toff

ID = 200mA, VGS = 10V,

RGEN = 25

− − 20

ns

− − 20

ns

Drain−Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain−Source

IS

Diode Forward Current

− − 115 mA

Maximum Pulsed Drain−Source

ISM

Diode Forward Current

− − 0.8

A

Drain−Source Diode Forward Voltage

VSD VGS = 0V, IS = 115mA, Note 1

− 0.88 1.5

V

Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.

.016 (0.48)

D

G

S

.098

(2.5)

Max

.074 (1.9)

.118 (3.0) Max

.037 (0.95)

.051 (1.3)

.043 (1.1)

.007 (0.2)

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