2N2222A(2012) Ver la hoja de datos (PDF) - ON Semiconductor
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2N2222A Datasheet PDF : 3 Pages
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2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
Collector−Base Cutoff Current
(VCB = 75 Vdc)
(VCB = 60 Vdc)
Emitter−Base Cutoff Current
(VEB = 6.0 Vdc)
(VEB = 4.0 Vdc)
Collector−Emitter Cutoff Current
(VCE = 50 Vdc)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0,100 kHz ≤ f ≤ 1.0 MHz )
SWITCHING (SATURATED) CHARACTERISTICS
Turn−On Time
(Reference Figure in MIL−PRF−19500/255)
Turn−Off Time
(Reference Figure in MIL−PRF−19500/255)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
50
ICBO
−
−
IEBO
−
−
ICES
−
−
Vdc
10
mAdc
10
nAdc
10
mAdc
10
nAdc
50
nAdc
hFE
−
50
−
75
325
100
−
100
300
30
−
VCE(sat)
Vdc
−
0.3
−
1.0
VBE(sat)
Vdc
0.6
1.2
−
2.0
|hfe|
hfe
Cibo
Cobo
−
2.5
−
−
50
−
pF
−
25
pF
−
8.0
ton
−
35
ns
toff
−
300
ns
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