1N5820 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
1N5820 Datasheet PDF : 8 Pages
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1N5820, 1N5821, 1N5822
50
30
20
TJ = 100°C
10
7.0
5.0
3.0
25°C
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 7. Typical Forward Voltage
500
1N5820
300
200
TJ = 25°C
f = 1.0 MHz
1N5821
100
70
1N5822
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
VR, REVERSE VOLTAGE (VOLTS)
20 30
Figure 10. Typical Capacitance
100
70
50
TL = 75°C
f = 60 Hz
30
20
1 CYCLE
10
1.0
SURGE APPLIED AT RATED LOAD CONDITIONS
2.0 3.0
5.0 7.0 10
20 30
NUMBER OF CYCLES
50 70 100
Figure 8. Maximum Non-Repetitive Surge
Current
100
50
TJ = 125°C
20
10
100°C
5.0
2.0 75°C
1.0
0.5
0.2
0.1 25°C
0.05
1N5820
1N5821
0.02
1N5822
0.01
0 4.0 8.0 12 16 20 24 28 32 36 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Typical Reverse Current
NOTE 6 — HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction di‐
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana‐
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
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